Preparation and characterization of cost effective spray pyrolyzed absorber layer for thin film solar cells
Identifieur interne : 000674 ( Main/Repository ); précédent : 000673; suivant : 000675Preparation and characterization of cost effective spray pyrolyzed absorber layer for thin film solar cells
Auteurs : RBID : Pascal:13-0281496Descripteurs français
- Pascal (Inist)
- Rentabilité, Matériau absorbant, Revêtement multicouche, Cellule couche mince, Cellule solaire, Ultrason, Pyrolyse, Dépôt projection, Caractéristique électrique, Propriété électrique, Verre sodocalcique, Microscopie électronique balayage, Fissure, Diffraction RX, Polycristal, Structure chalcopyrite, Matériau cristallin, Cuivre, Indium, Composé ternaire, Sulfure de cuivre, Sulfure d'indium, Couche mince, Chalcopyrite, CuInS2.
- Wicri :
- concept : Rentabilité, Cuivre.
English descriptors
- KwdEn :
- Absorbent material, Chalcopyrite, Chalcopyrite structure, Copper, Copper sulfide, Crack, Crystalline material, Electrical characteristic, Electrical properties, Indium, Indium sulfide, Multilayer coating, Polycrystal, Profitability, Pyrolysis, Scanning electron microscopy, Soda-lime glasses, Solar cell, Spray coating, Ternary compound, Thin film, Thin film cell, Ultrasound, X ray diffraction.
Abstract
In this study, highly (112) oriented crystalline copper indium disulfide (CuInS2) thin films with high mobility have been deposited via ultrasonic spray pyrolysis. Structural and electrical properties of CuInS2 thin films were examined to utilize them in solar cell applications. Various amounts of precursor solution ranging from 0.25 to 2.02 ml/cm2 were used to form CuInS2 thin films onto the soda lime glass substrates. Scanning electron microscopy (SEM) analysis revealed that all sprayed films were pin-hole and crack free. Atomic percent ratios of the Cu/In and S/In were very close to the targeted stoichiometric ratios of 1/1 and 2/1, respectively. X-ray diffraction (XRD) studies revealed that all the deposited films were polycrystalline and exhibiting the chalcopyrite structure. Optical band gap energy of the films were calculated as 2.85 eV and decreased to 1.40 eV by increasing the solution loading. Hopping mechanism could be considered as the dominant conduction mechanism in the studied temperature range. Carrier concentrations in CuInS2 films were ranging between 1015 and 1017 cm-3. Mobility and the carrier concentration of the CuInS2 thin films deposited from 1.52 ml/cm2 solution loading were 40.1 cm2/V s and 1.69 × 1017, respectively. At last but not least, the amount of solution used in this study to form CuInS2 thin films was one of the lowest values reported in the literature.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Preparation and characterization of cost effective spray pyrolyzed absorber layer for thin film solar cells</title><author><name sortKey="Sankir, Nurdan D" uniqKey="Sankir N">Nurdan D. Sankir</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Nanotechnology Engineering, TOBB University of Economics and Technology</s1><s2>Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>Ankara</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology</s1><s2>Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>Ankara</wicri:noRegion></affiliation></author><author><name sortKey="Aydin, Erkan" uniqKey="Aydin E">Erkan Aydin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology</s1><s2>Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>Ankara</wicri:noRegion></affiliation></author><author><name sortKey="Unver, Hulya" uniqKey="Unver H">Hulya Unver</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology</s1><s2>Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>Ankara</wicri:noRegion></affiliation></author><author><name sortKey="Uluer, Ezgi" uniqKey="Uluer E">Ezgi Uluer</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology</s1><s2>Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>Ankara</wicri:noRegion></affiliation></author><author><name sortKey="Parlak, Mehmet" uniqKey="Parlak M">Mehmet Parlak</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Middle East Technical University</s1><s2>Ankara</s2><s3>TUR</s3><sZ>5 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>Ankara</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0281496</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0281496 INIST</idno><idno type="RBID">Pascal:13-0281496</idno><idno type="wicri:Area/Main/Corpus">000888</idno><idno type="wicri:Area/Main/Repository">000674</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-092X</idno><title level="j" type="abbreviated">Sol. energy</title><title level="j" type="main">Solar energy</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorbent material</term><term>Chalcopyrite</term><term>Chalcopyrite structure</term><term>Copper</term><term>Copper sulfide</term><term>Crack</term><term>Crystalline material</term><term>Electrical characteristic</term><term>Electrical properties</term><term>Indium</term><term>Indium sulfide</term><term>Multilayer coating</term><term>Polycrystal</term><term>Profitability</term><term>Pyrolysis</term><term>Scanning electron microscopy</term><term>Soda-lime glasses</term><term>Solar cell</term><term>Spray coating</term><term>Ternary compound</term><term>Thin film</term><term>Thin film cell</term><term>Ultrasound</term><term>X ray diffraction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Rentabilité</term><term>Matériau absorbant</term><term>Revêtement multicouche</term><term>Cellule couche mince</term><term>Cellule solaire</term><term>Ultrason</term><term>Pyrolyse</term><term>Dépôt projection</term><term>Caractéristique électrique</term><term>Propriété électrique</term><term>Verre sodocalcique</term><term>Microscopie électronique balayage</term><term>Fissure</term><term>Diffraction RX</term><term>Polycristal</term><term>Structure chalcopyrite</term><term>Matériau cristallin</term><term>Cuivre</term><term>Indium</term><term>Composé ternaire</term><term>Sulfure de cuivre</term><term>Sulfure d'indium</term><term>Couche mince</term><term>Chalcopyrite</term><term>CuInS2</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Rentabilité</term><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this study, highly (112) oriented crystalline copper indium disulfide (CuInS<sub>2</sub>) thin films with high mobility have been deposited via ultrasonic spray pyrolysis. Structural and electrical properties of CuInS<sub>2</sub> thin films were examined to utilize them in solar cell applications. Various amounts of precursor solution ranging from 0.25 to 2.02 ml/cm<sup>2</sup> were used to form CuInS<sub>2</sub> thin films onto the soda lime glass substrates. Scanning electron microscopy (SEM) analysis revealed that all sprayed films were pin-hole and crack free. Atomic percent ratios of the Cu/In and S/In were very close to the targeted stoichiometric ratios of 1/1 and 2/1, respectively. X-ray diffraction (XRD) studies revealed that all the deposited films were polycrystalline and exhibiting the chalcopyrite structure. Optical band gap energy of the films were calculated as 2.85 eV and decreased to 1.40 eV by increasing the solution loading. Hopping mechanism could be considered as the dominant conduction mechanism in the studied temperature range. Carrier concentrations in CuInS<sub>2</sub> films were ranging between 10<sup>15</sup> and 10<sup>17</sup> cm<sup>-3</sup>. Mobility and the carrier concentration of the CuInS<sub>2</sub> thin films deposited from 1.52 ml/cm<sup>2</sup> solution loading were 40.1 cm<sup>2</sup>/V s and 1.69 × 10<sup>17</sup>, respectively. At last but not least, the amount of solution used in this study to form CuInS<sub>2</sub> thin films was one of the lowest values reported in the literature.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-092X</s0></fA01><fA02 i1="01"><s0>SRENA4</s0></fA02><fA03 i2="1"><s0>Sol. energy</s0></fA03><fA05><s2>95</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Preparation and characterization of cost effective spray pyrolyzed absorber layer for thin film solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>SANKIR (Nurdan D.)</s1></fA11><fA11 i1="02" i2="1"><s1>AYDIN (Erkan)</s1></fA11><fA11 i1="03" i2="1"><s1>UNVER (Hulya)</s1></fA11><fA11 i1="04" i2="1"><s1>ULUER (Ezgi)</s1></fA11><fA11 i1="05" i2="1"><s1>PARLAK (Mehmet)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Nanotechnology Engineering, TOBB University of Economics and Technology</s1><s2>Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology</s1><s2>Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, Middle East Technical University</s1><s2>Ankara</s2><s3>TUR</s3><sZ>5 aut.</sZ></fA14><fA20><s1>21-29</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>8338A</s2><s5>354000505814540030</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>3/4 p.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0281496</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>In this study, highly (112) oriented crystalline copper indium disulfide (CuInS<sub>2</sub>) thin films with high mobility have been deposited via ultrasonic spray pyrolysis. Structural and electrical properties of CuInS<sub>2</sub> thin films were examined to utilize them in solar cell applications. Various amounts of precursor solution ranging from 0.25 to 2.02 ml/cm<sup>2</sup> were used to form CuInS<sub>2</sub> thin films onto the soda lime glass substrates. Scanning electron microscopy (SEM) analysis revealed that all sprayed films were pin-hole and crack free. Atomic percent ratios of the Cu/In and S/In were very close to the targeted stoichiometric ratios of 1/1 and 2/1, respectively. X-ray diffraction (XRD) studies revealed that all the deposited films were polycrystalline and exhibiting the chalcopyrite structure. Optical band gap energy of the films were calculated as 2.85 eV and decreased to 1.40 eV by increasing the solution loading. Hopping mechanism could be considered as the dominant conduction mechanism in the studied temperature range. Carrier concentrations in CuInS<sub>2</sub> films were ranging between 10<sup>15</sup> and 10<sup>17</sup> cm<sup>-3</sup>. Mobility and the carrier concentration of the CuInS<sub>2</sub> thin films deposited from 1.52 ml/cm<sup>2</sup> solution loading were 40.1 cm<sup>2</sup>/V s and 1.69 × 10<sup>17</sup>, respectively. At last but not least, the amount of solution used in this study to form CuInS<sub>2</sub> thin films was one of the lowest values reported in the literature.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001D05I03D</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Rentabilité</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Profitability</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Rentabilidad</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Matériau absorbant</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Absorbent material</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Material absorbente</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Revêtement multicouche</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Multilayer coating</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Revestimiento multicapa</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Cellule couche mince</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Thin film cell</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Célula capa delgada</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Solar cell</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Célula solar</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Ultrason</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Ultrasound</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Ultrasonido</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Pyrolyse</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Pyrolysis</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Pirólisis</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Dépôt projection</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Spray coating</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Depósito 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